The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. Physics.ins-det Detectors and Experimental Techniques Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep -, pp.C01043 KEYWORDS: Radiation-hard electronics Voltage distributions Large detector systems for particle and astroparticle physics. Microelectron.) Quirion, David (Barcelona, Inst. Microelectron.) Hidalgo, Salvador (Barcelona, Inst. Microelectron.) Flores, David (Barcelona, Inst. Microelectron.) Ullan, Miguel (Barcelona, Inst.

Undersea fiber optic cables use power supplies that are just a large Zener diode.Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Trackerįernandez-Martinez, Pablo (Barcelona, Inst. It also may be slightly more reliable, since the circuit is just two components that are quite reliable to begin with. This arrangement might be less expensive than an IC regulator. If you connect a source-connected JFET to a Zener diode, you will improve the voltage regulation of the diode, since it’s now stabilized at a fixed current no matter the input voltage to the network. Still, having an inexpensive two-terminal current source can be quite handy. JFETs are depletion-mode devices that conduct until you apply a negative voltage to the gate relative to the source. The size of the JFET will determine the rough range of the current, but it does change over temperature. One problem you might face is that the IDSS of FETs is quite variable for different parts of the same number. The current that will flow is called IDSS (current, drain-to-source, saturated). When you connect the gate to the source of a JFET (junction field-effect transistor), it becomes a two-terminal current source.

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